Non-volatile Resistive Switching Memory Technology
Electrical Engineering
Team 5
Trevor Smith, Ethan Morgan, Ming-Feng Tsai, Tyler Cloar, Vincent Baer
Summary
Resistive Random-Access Memory (RRAM) is a two-terminal, non-volatile memory device that stores data by switching between the High Resistance State (Logic ‘0’) and the Low Resistance State (Logic ‘1’). RRAM is a leading candidate for next-generation memory due to its simple metal-insulator-metal structure, fast switching, excellent scalability, and low power consumption — addressing key limitations of conventional charge-based Flash and DRAM.